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d a t a sh eet product speci?cation supersedes data of 1997 oct 17 file under integrated circuits, ic19 2000 mar 29 integrated circuits tza3023 sdh/sonet stm4/oc12 transimpedance amplifier
2000 mar 29 2 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 features wide dynamic input range from 1 m a to 1.5 ma low equivalent input noise of 3.5 pa/ ? hz (typical) differential transimpedance of 21 k w wide bandwidth from dc to 600 mhz differential outputs on-chip automatic gain control (agc) no external components required single supply voltage from 3.0 to 5.5 v bias voltage for pin diode pin compatible with sa5223. applications digital fibre optic receiver in short, medium and long haul optical telecommunications transmission systems or in high-speed data networks wideband rf gain block. description the tza3023 is a low-noise transimpedance amplifier with agc designed to be used in stm4/oc12 fibre optic links. it amplifies the current generated by a photo detector (pin diode or avalanche photodiode) and converts it to a differential output voltage. ordering information block diagram type number package name description version TZA3023T so8 plastic small outline package; 8 leads; body width 3.9 mm sot96-1 tza3023u - bare die in waf?e pack carriers; die dimensions 1.030 1.300 mm - handbook, full pagewidth gain control biasing a1 1 (1) 8 (11, 12) dref 3 (4) iphoto low noise amplifier single-ended to differential converter v cc 2, 4, 5 (2, 3, 5, 6, 7, 8) gnd agc (1) peak detector tza3023 6 (9) out 7 (10) outq mgk918 2 k w (13) fig.1 block diagram. the numbers in brackets refer to the pad numbers of the bare die version. (1) agc analog i/o is only available on the tza3023u (pad 13).
2000 mar 29 3 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 pinning symbol pin TZA3023T pad tza3023u type description dref 1 1 analog output bias voltage for pin diode; cathode should be connected to this pin gnd 2 2, 3 ground ground iphoto 3 4 analog input current input; anode of pin diode should be connected to this pin; dc bias level of 800 mv, one diode voltage above ground gnd 4 5, 6 ground ground gnd 5 7, 8 ground ground out 6 9 output data output; pin out goes high when current ?ows into pin iphoto outq 7 10 output data output; compliment of pin out v cc 8 11, 12 supply supply voltage agc - 13 input/output agc analog i/o handbook, halfpage 1 2 3 4 8 7 6 5 mgk917 TZA3023T v cc outq gnd out gnd gnd iphoto dref fig.2 pin configuration.
2000 mar 29 4 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 functional description the tza3023 is a transimpedance amplifier intended for use in fibre optic links for signal recovery in stm4/oc12 applications. it amplifies the current generated by a photo detector (pin diode or avalanche photodiode) and transforms it into a differential output voltage. the most important characteristics of the tza3023 are high receiver sensitivity and wide dynamic range. high receiver sensitivity is achieved by minimizing noise in the transimpedance amplifier. the signal current generated by a pin diode can vary between 1 m a to 1.5 ma (p-p). an agc loop is implemented to make it possible to handle such a wide dynamic range. the agc loop increases the dynamic range of the receiver by reducing the feedback resistance of the preamplifier. the agc loop hold capacitor is integrated on-chip, so an external capacitor is not needed for agc. the agc voltage can be monitored at pad 13 on the bare die (tza3023u). pad 13 is not bonded in the packaged device (TZA3023T). this pad can be left unconnected during normal operation. it can also be used to force an external agc voltage. if pad 13 is connected to gnd, the internal agc loop is disabled and the receiver gain is at a maximum. the maximum input current is then approximately 50 m a. a differential amplifier converts the single-ended output of the preamplifier to a differential output voltage (see fig.3). handbook, full pagewidth mgk922 600 w 600 w 30 w v cc v outq v out 4.5 ma 2 ma 4.5 ma 30 w fig.3 data output buffer. handbook, full pagewidth mgk885 v oo v o(max) v oqh v oh v oql v ol v o(min) v o (p-p) v cc cml/pecl output fig.4 logic level symbol definitions for data outputs out and outq.
2000 mar 29 5 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 pin diode bias voltage dref the transimpedance amplifier together with the pin diode determines the performance of an optical receiver for a large extent. especially how the pin diode is connected to the input and the layout around the input pin influence the key parameters like sensitivity, bandwidth and the power supply rejection ratio (psrr) of a transimpedance amplifier. the total capacitance at the input pin is critical to obtain the highest sensitivity. it should be kept to a minimum by reducing the capacitor of the pin diode and the parasitics around the input pin. the pin diode should be placed very close to the ic to reduce the parasitics. because the capacitance of the pin diode depends on the reverse voltage across it, the reverse voltage should be chosen as high as possible. the pin diode can be connected to the input in two ways as shown in figs 5 and 6. in fig.5 the pin diode is connected between dref and iphoto. pin dref provides an easy bias voltage for the pin diode. the voltage at dref is derived from v cc by a low-pass filter. the low-pass filter consisting of the internal resistor r1, c1 and the external capacitor c2 rejects the supply voltage noise. the external capacitor c2 should be equal or larger then 1 nf for a high psrr. the reverse voltage across the pin diode is 4.2 v (5 - 0.8 v) for 5 v supply or 2.5 v (3.3 - 0.8 v) for 3.3 v supply. the dc voltage at dref decreases with increasing signal levels. consequently the reverse voltage across the pin diode will also decrease with increasing signal levels. this can be explained with an example. when the pin diode delivers a peak-to-peak current of 1 ma, the average dc current will be 0.5 ma. this dc current is delivered by v cc through the internal resistor r1 of 2 k w which will cause a voltage drop of 1 v across the resistor and the reverse voltage across the pin diode will be reduced by 1 v. it is preferable to connect the cathode of the pin diode to a higher voltage then v cc when such a voltage source is available on the board. in this case pin dref can be left unconnected. when a negative supply voltage is available, the configuration in fig.6 can be used. it should be noted that in this case the direction of the signal current is reversed compared to fig.5. proper filtering of the bias voltage for the pin diode is essential to achieve the highest sensitivity level. mcd900 r1 2 k w c1 10 pf c2 1 nf v cc i i 4 8 tza3023 7 iphoto dref fig.5 the pin diode connected between the input and pin dref. mcd901 r1 2 k w c1 10 pf v cc i i 4 8 tza3023 7 iphoto negative supply voltage dref fig.6 the pin diode connected between the input and a negative supply voltage.
2000 mar 29 6 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 agc tza3023 transimpedance amplifier can handle input currents from 0.5 m a to 1.5 ma. this means a dynamic range of 72 db. at low input currents, the transimpedance must be high to get enough output voltage, and the noise should be low enough to guaranty minimum bit error rate. at high input currents however, the transimpedance should be low to avoid pulse width distortion. this means that the gain of the amplifier has to vary depending on the input signal level to handle such a wide dynamic range. this is achieved in the tza3023 by implementing an automatic gain control (agc) loop. the agc loop consists of a peak detector, a hold capacitor and a gain control circuit. the peak amplitude of the signal is detected by the peak detector and it is stored on the hold capacitor. the voltage over the hold capacitor is compared to a threshold level. the threshold level is set to 10 m a (p-p) input current. agc becomes active only for input signals larger than the threshold level. it is disabled for smaller signals. the transimpedance is then at its maximum value (21 k w differential). when the agc is active, the feedback resistor of the transimpedance amplifier is reduced to keep the output voltage constant. the transimpedance is regulated from 21 k w at low currents (i < 10 m a) to 800 w at high currents (i < 500 m a). above 500 m a the transimpedance is at its minimum and can not be reduced further but the front-end remains linear until input currents of 1.5 ma. the upper part of fig.7 shows the output voltages of the tza3023 (out and outq) as a function of the dc input current. in the lower part, the difference of both voltages is shown. it can be seen from the figure that the output changes linearly up to 10 m a input current where agc becomes active. from this point on, agc tries to keep the differential output voltage constant around 200 mv for medium range input currents (input currents <200 m a). the agc can not regulate any more above 600 m a input current, and the output voltage rises again with the input current. handbook, full pagewidth 0 600 400 200 mcd914 110 2 10 (1) (2) (3) i i ( m a) v o (v) v o(dif) (mv) 10 3 10 4 1 1.2 1.6 1.4 1.8 v cc = 3 v v out v outq fig.7 agc characteristics. v o(dif) =v out - v outq . (1) v cc =3v. (2) v cc = 3.3 v. (3) v cc =5v.
2000 mar 29 7 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 limiting values in accordance with the absolute maximum rating system (iec 60134). handling precautions should be taken to avoid damage through electrostatic discharge. this is particularly important during assembly and handling of the bare die. additional safety can be obtained by bonding the v cc and gnd pads first, the remaining pads may then be bonded to their external connections in any order. thermal characteristics symbol parameter min. max. unit v cc supply voltage - 0.5 +6 v v n dc voltage pin 3/pad 4: iphoto - 0.5 +1 v pins 6 and 7/pads 9 and 10: out and outq - 0.5 v cc + 0.5 v pad 13: agc (tza3023u only) - 0.5 v cc + 0.5 v pin 1/pad 1: dref - 0.5 v cc + 0.5 v i n dc current pin 3/pad 4: iphoto - 1 +2.5 ma pins 6 and 7/pads 9 and 10: out and outq - 15 +15 ma pad 13: agc (tza3023u only) - 0.2 +0.2 ma pin 1/pad 1: dref - 2.5 +2.5 ma p tot total power dissipation - 300 mw t stg storage temperature - 65 +150 c t j junction temperature - 125 c t amb ambient temperature - 40 +85 c symbol parameter value unit r th(j-a) thermal resistance from junction to ambient 160 k/w
2000 mar 29 8 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 characteristics typical values at t amb =25 c and v cc = 5 v; minimum and maximum values are valid over the entire ambient temperature range and supply range; all voltages are measured with respect to ground; unless otherwise speci?ed. symbol parameter conditions min. typ. max. unit v cc supply voltage 3 5 5.5 v i cc supply current v cc = 5 v; ac coupled; r l =50 w 23 28 45 ma v cc = 3.3v; ac coupled; r l =50 w 20 28 42 ma p tot total power dissipation v cc =5v - 140 248 mw v cc = 3.3 v - 95 152 mw t j junction temperature - 40 - +125 c t amb ambient temperature - 40 +25 +85 c r tr differential small-signal transresistance of the receiver v cc = 5 v; ac coupled; r l =50 w 17.5 21 25 k w v cc = 3.3 v; ac coupled; r l =50 w 16 19.5 25 k w f - 3db(h) high frequency - 3 db point v cc =5v; c i = 0.7 pf 450 580 750 mhz v cc = 3.3 v; c i = 0.7 pf 440 520 600 mhz psrr power supply rejection ratio measured differentially; note 1 f = 100 khz to 10 mhz - 12 m a/v f = 10 to 100 mhz - 25 m a/v f = 100 mhz to 1 ghz - 5 100 m a/v bias voltage: pin dref r dref resistance between pins dref and v cc dc tested 1680 2000 2320 w input: pin iphoto v bias(iphoto) input bias voltage on pin iphoto 720 800 970 mv i i(iphoto)(p-p) input current on pin iphoto (peak-to-peak value) v cc = 5 v; note 2 - 1500 +4 +1500 m a v cc = 3.3 v; note 2 - 1000 +4 +1000 m a r i small-signal input resistance f i = 1 mhz; input current <2 m a (p-p) - 95 -w i n(tot) total integrated rms noise current over bandwidth (referenced to input) note 3 d f = 311 mhz - 55 - na d f = 450 mhz - 80 - na d f = 622 mhz - 120 - na
2000 mar 29 9 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 notes 1. psrr is defined as the ratio of the equivalent current change at the input ( d i iphoto ) to a change in supply voltage: for example, a + 4 mv disturbance on v cc at 10 mhz will typically add an extra 8 na to the photodiode current. the external capacitor between pins dref and gnd has a large impact on the psrr. the specification is valid with an external capacitor of 1 nf. the pssr is guaranteed by design. 2. the pulse width distortion (pwd) is <5% over the whole input current range. the pwd is defined as: where t is the clock period. the pwd is measured differentially with prbs pattern of 10 - 23 . 3. all i n(tot) measurements were made with an input capacitance of c i = 1.2 pf. this was comprised of 0.7 pf for the photodiode itself, with 0.3 pf allowed for the printed-circuit board layout and 0.2 pf intrinsic to the package. noise performance is measured differentially. data outputs: pins out and outq v o(cm) common mode output voltage ac coupled; r l =50 w v cc - 2v cc - 1.7 v cc - 1.4 v v o(se)(p-p) single-ended output voltage (peak-to-peak value) ac coupled; r l =50 w ; input current 100 m a (p-p) 75 200 330 mv v oo differential output offset voltage - 100 0 +100 mv r o(se) single-ended output resistance dc tested 40 50 62 w t r , t f rise time, fall time v cc = 5 v; 20% to 80%; input current <10 m a (p-p) 400 510 700 ps v cc = 3.3 v; 20% to 80%; input current <10 m a (p-p) 450 550 700 ps automatic gain control loop: pad agc i th(agc) agc threshold current referred to the peak input current; tested at 10 mhz - 10 -m a t att(agc) agc attack time - 5 -m s t decay(agc) agc decay time - 10 - ms symbol parameter conditions min. typ. max. unit psrr i iphoto d v cc d ------------------- - = pwd pulse width t ----------------------------- - 1 C ? ?? 100% =
2000 mar 29 10 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 typical performance characteristics handbook, halfpage - 40 0 (2) 40 t j ( c) i cc (ma) 120 40 20 36 80 32 28 24 mcd908 (3) (1) fig.8 supply current as a function of the junction temperature. (1) v cc =5v. (2) v cc = 3.3 v. (3) v cc =3v. handbook, halfpage 34 i cc (ma) v cc (v) 56 31.4 31.0 30.2 29.8 30.6 mcd909 fig.9 supply current as a function of the supply voltage. handbook, halfpage 34 v i (mv) v cc (v) 56 808 806 802 800 804 mcd910 fig.10 input voltage as a function of the supply voltage. handbook, halfpage - 40 0 (1) (2) (3) 40 t j ( c) v i (mv) 120 900 660 740 820 80 mcd911 fig.11 input voltage as a function of the junction temperature. (1) v cc =5v. (2) v cc = 3.3 v. (3) v cc =3v.
2000 mar 29 11 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 handbook, halfpage 3 (1) (2) 4 v cc (v) v o(cm) (v) 56 1.686 1.680 1.668 1.662 1.674 mcd912 fig.12 common mode voltage at the output as a function of the supply voltage. (1) v cc - v out . (2) v cc - v outq . handbook, halfpage - 40 0 (2) (1) 40 t j ( c) v o(cm) (v) 120 1.85 1.55 1.65 1.75 80 mcd913 fig.13 the common mode voltage at the output as a function of the junction temperature. v cc = 3.3 v. (1) v cc - v out . (2) v cc - v outq .
2000 mar 29 12 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 application and test information handbook, full pagewidth 2 mcd898 1 8 v cc dref 3 iphoto gnd 4 gnd 5 gnd TZA3023T 7 outq 6 out 50 w 50 w z o = 50 w z o = 50 w 22 nf 1 nf 680 nf 10 m h v p 100 nf 100 nf fig.14 application diagram.
2000 mar 29 13 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 this text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader .this text is here in _ white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader.this text is here inthis text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the acrobat reader. white to force landscape pages to be ... k , full pagewidth mcd899 12 doutq 6 out 7 outq 13 dout 1 k w 50 w 50 w 10 nf 10 nf 100 nf 8 pf noise filter: 1-pole, 400 mhz 100 w 61 k w TZA3023T tza3044 sub jam stq st agnd 8 v cc v cc 6 v cca 16 rset 7 cf 15 v ref 14 v ccd dgnd data out level-detect status v cc - 2 v 5 dinq 4 din 3 iphoto 1 dref 22 nf 680 nf 100 nf 1 nf 7.5 pf 1.1 pf 16.4 nh 16.4 nh optional noise filter: 3-pole, 470 mhz bessel (1) (1) (1) 2 gnd 4 gnd 5 gnd 3 1 8 9 10 11 fig.15 stm4/oc12 receiver using the TZA3023T and postamplifier tza3044. (1) ferrite bead e.g. murata blm10a700s.
2000 mar 29 14 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 test circuits handbook, full pagewidth mcd902 1 k w 51 w z o = 50 w z o = 50 w z o = 50 w iphoto out outq 10 nf tr d v cc 100 nf tr 1 sampling oscilloscope/ tdr/tdt 2 port 1 port 2 network analyzer z t = s 21 .(r + z i ) . 2 r = 1 k w , z i = 100 w s-parameter test set 100 nf tza3023 om5803 pattern generator 2 23 -1 prbs c in d c c fig.16 electrical test circuit.
2000 mar 29 15 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 handbook, full pagewidth mcd903 z o = 50 w iphoto pin dref din dinq 0 dbm/1300 laser in out optical input out outq tr d v cc 100 nf 22 nf 10 nf 10% 90% data in clock in error detector tr 1 2 100 nf tza3023 tza3001 om5804 om5802 pattern generator laser driver optical attenuator lightwave multimeter 622.080 mhz 2 23 -1 prbs c in d c c - 9.54 dbm sampling oscilloscope/ tdr/tdt fig.17 optical test circuit.
2000 mar 29 16 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 handbook, full pagewidth mcd904 fig.18 differential output with - 30 dbm optical input power [input current of 1.63 m a (p-p)]. handbook, full pagewidth mcd905 fig.19 differential output with - 20 dbm optical input power [input current of 16.3 m a (p-p)].
2000 mar 29 17 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 handbook, full pagewidth mcd906 fig.20 differential output with - 10 dbm optical input power [input current of 163 m a (p-p)]. handbook, full pagewidth mcd907 fig.21 differential output with - 2 dbm optical input power [input current of 1030 m a (p-p)].
2000 mar 29 18 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 bonding pad locations note 1. all coordinates are referenced, in m m, to the bottom left-hand corner of the die. symbol pad coordinates (1) xy dref 1 95 881 gnd 2 95 618 gnd 3 95 473 iphoto 4 95 285 gnd 5 215 95 gnd 6 360 95 gnd 7 549 95 gnd 8 691 95 out 9 785 501 outq 10 785 641 v cc 11 567 1055 v cc 12 424 1055 agc 13 259 1055 tza3023u 1 10 9 2 3 4 5 0 x y 0 13 12 11 67 8 1300 m m 1030 m m dref iphoto gnd gnd outq out mcd897 gnd gnd agc v cc v cc gnd gnd fig.22 bonding pad locations of the tza3023u. physical characteristics of the bare die parameter value glass passivation 2.1 m m psg (phosphosilicate glass) on top of 0.65 m m oxynitride bonding pad dimension minimum dimension of exposed metallization is 90 90 m m (pad size = 100 100 m m) metallization 1.22 m m w/alcu/tiw thickness 380 m m nominal size 1.03 1.30 mm (1.34 mm 2 ) backing silicon; electrically connected to gnd potential through substrate contacts attach temperature <440 c; recommended die attach is glue attach time <15 s
2000 mar 29 19 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 package outline unit a max. a 1 a 2 a 3 b p cd (1) e (2) (1) eh e ll p qz y w v q references outline version european projection issue date iec jedec eiaj mm inches 1.75 0.25 0.10 1.45 1.25 0.25 0.49 0.36 0.25 0.19 5.0 4.8 4.0 3.8 1.27 6.2 5.8 1.05 0.7 0.6 0.7 0.3 8 0 o o 0.25 0.1 0.25 dimensions (inch dimensions are derived from the original mm dimensions) notes 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. plastic or metal protrusions of 0.25 mm maximum per side are not included. 1.0 0.4 sot96-1 x w m q a a 1 a 2 b p d h e l p q detail x e z e c l v m a (a ) 3 a 4 5 pin 1 index 1 8 y 076e03 ms-012 0.069 0.010 0.004 0.057 0.049 0.01 0.019 0.014 0.0100 0.0075 0.20 0.19 0.16 0.15 0.050 0.244 0.228 0.028 0.024 0.028 0.012 0.01 0.01 0.041 0.004 0.039 0.016 0 2.5 5 mm scale so8: plastic small outline package; 8 leads; body width 3.9 mm sot96-1 97-05-22 99-12-27
2000 mar 29 20 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 soldering introduction to soldering surface mount packages this text gives a very brief insight to a complex technology. a more in-depth account of soldering ics can be found in our data handbook ic26; integrated circuit packages (document order number 9398 652 90011). there is no soldering method that is ideal for all surface mount ic packages. wave soldering is not always suitable for surface mount ics, or for printed-circuit boards with high population densities. in these situations reflow soldering is often used. re?ow soldering reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. several methods exist for reflowing; for example, infrared/convection heating in a conveyor type oven. throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. typical reflow peak temperatures range from 215 to 250 c. the top-surface temperature of the packages should preferable be kept below 230 c. wave soldering conventional single wave soldering is not recommended for surface mount devices (smds) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. to overcome these problems the double-wave soldering method was specifically developed. if wave soldering is used the following conditions must be observed for optimal results: use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. for packages with leads on two sides and a pitch (e): C larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; C smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves at the downstream end. for packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. the footprint must incorporate solder thieves downstream and at the side corners. during placement and before soldering, the package must be fixed with a droplet of adhesive. the adhesive can be applied by screen printing, pin transfer or syringe dispensing. the package can be soldered after the adhesive is cured. typical dwell time is 4 seconds at 250 c. a mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. manual soldering fix the component by first soldering two diagonally-opposite end leads. use a low voltage (24 v or less) soldering iron applied to the flat part of the lead. contact time must be limited to 10 seconds at up to 300 c. when using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 c.
2000 mar 29 21 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 suitability of surface mount ic packages for wave and re?ow soldering methods notes 1. all surface mount (smd) packages are moisture sensitive. depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). for details, refer to the drypack information in the data handbook ic26; integrated circuit packages; section: packing methods . 2. these packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink (at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version). 3. if wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. the package footprint must incorporate solder thieves downstream and at the side corners. 4. wave soldering is only suitable for lqfp, tqfp and qfp packages with a pitch (e) equal to or larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 5. wave soldering is only suitable for ssop and tssop packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm. package soldering method wave reflow (1) bga, lfbga, sqfp, tfbga not suitable suitable hbcc, hlqfp, hsqfp, hsop, htqfp, htssop, sms not suitable (2) suitable plcc (3) , so, soj suitable suitable lqfp, qfp, tqfp not recommended (3)(4) suitable ssop, tssop, vso not recommended (5) suitable
2000 mar 29 22 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 data sheet status note 1. please consult the most recently issued data sheet before initiating or completing a design. data sheet status product status definitions (1) objective speci?cation development this data sheet contains the design target or goal speci?cations for product development. speci?cation may change in any manner without notice. preliminary speci?cation quali?cation this data sheet contains preliminary data, and supplementary data will be published at a later date. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. product speci?cation production this data sheet contains ?nal speci?cations. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. definitions short-form specification ? the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition ? limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limiting values for extended periods may affect device reliability. application information ? applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support applications ? these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes ? philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. bare die disclaimer all die are tested and are guaranteed to comply with all data sheet limits up to the point of wafer sawing for a period of ninety (90) days from the date of philips' delivery. if there are data sheet limits not guaranteed, these will be separately indicated in the data sheet. there are no post packing tests performed on individual die or wafer. philips semiconductors has no control of third party procedures in the sawing, handling, packing or assembly of the die. accordingly, philips semiconductors assumes no liability for device functionality or performance of the die or systems after third party sawing, handling, packing or assembly of the die. it is the responsibility of the customer to test and qualify their application in which the die is used.
2000 mar 29 23 philips semiconductors product speci?cation sdh/sonet stm4/oc12 transimpedance ampli?er tza3023 notes
? philips electronics n.v. sca all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not con vey nor imply any license under patent- or other industrial or intellectual property rights. internet: http://www.semiconductors.philips.com 2000 69 philips semiconductors C a worldwide company for all other countries apply to: philips semiconductors, international marketing & sales communications, building be-p, p.o. box 218, 5600 md eindhoven, the netherlands, fax. +31 40 27 24825 argentina: see south america australia: 3 figtree drive, homebush, nsw 2140, tel. +61 2 9704 8141, fax. +61 2 9704 8139 austria: computerstr. 6, a-1101 wien, p.o. box 213, tel. +43 1 60 101 1248, fax. +43 1 60 101 1210 belarus: hotel minsk business center, bld. 3, r. 1211, volodarski str. 6, 220050 minsk, tel. +375 172 20 0733, fax. +375 172 20 0773 belgium: see the netherlands brazil: see south america bulgaria: philips bulgaria ltd., energoproject, 15th floor, 51 james bourchier blvd., 1407 sofia, tel. +359 2 68 9211, fax. +359 2 68 9102 canada: philips semiconductors/components, tel. +1 800 234 7381, fax. +1 800 943 0087 china/hong kong: 501 hong kong industrial technology centre, 72 tat chee avenue, kowloon tong, hong kong, tel. +852 2319 7888, fax. +852 2319 7700 colombia: see south america czech republic: see austria denmark: sydhavnsgade 23, 1780 copenhagen v, tel. +45 33 29 3333, fax. +45 33 29 3905 finland: sinikalliontie 3, fin-02630 espoo, tel. +358 9 615 800, fax. +358 9 6158 0920 france: 51 rue carnot, bp317, 92156 suresnes cedex, tel. +33 1 4099 6161, fax. +33 1 4099 6427 germany: hammerbrookstra?e 69, d-20097 hamburg, tel. +49 40 2353 60, fax. +49 40 2353 6300 hungary: see austria india: philips india ltd, band box building, 2nd floor, 254-d, dr. annie besant road, worli, mumbai 400 025, tel. +91 22 493 8541, fax. +91 22 493 0966 indonesia: pt philips development corporation, semiconductors division, gedung philips, jl. buncit raya kav.99-100, jakarta 12510, tel. +62 21 794 0040 ext. 2501, fax. +62 21 794 0080 ireland: newstead, clonskeagh, dublin 14, tel. +353 1 7640 000, fax. +353 1 7640 200 israel: rapac electronics, 7 kehilat saloniki st, po box 18053, tel aviv 61180, tel. +972 3 645 0444, fax. +972 3 649 1007 italy: philips semiconductors, via casati, 23 - 20052 monza (mi), tel. +39 039 203 6838, fax +39 039 203 6800 japan: philips bldg 13-37, kohnan 2-chome, minato-ku, tokyo 108-8507, tel. +81 3 3740 5130, fax. +81 3 3740 5057 korea: philips house, 260-199 itaewon-dong, yongsan-ku, seoul, tel. +82 2 709 1412, fax. +82 2 709 1415 malaysia: no. 76 jalan universiti, 46200 petaling jaya, selangor, tel. +60 3 750 5214, fax. +60 3 757 4880 mexico: 5900 gateway east, suite 200, el paso, texas 79905, tel. +9-5 800 234 7381, fax +9-5 800 943 0087 middle east: see italy netherlands: postbus 90050, 5600 pb eindhoven, bldg. vb, tel. +31 40 27 82785, fax. +31 40 27 88399 new zealand: 2 wagener place, c.p.o. box 1041, auckland, tel. +64 9 849 4160, fax. +64 9 849 7811 norway: box 1, manglerud 0612, oslo, tel. +47 22 74 8000, fax. +47 22 74 8341 pakistan: see singapore philippines: philips semiconductors philippines inc., 106 valero st. salcedo village, p.o. box 2108 mcc, makati, metro manila, tel. +63 2 816 6380, fax. +63 2 817 3474 poland : al.jerozolimskie 195 b, 02-222 warsaw, tel. +48 22 5710 000, fax. +48 22 5710 001 portugal: see spain romania: see italy russia: philips russia, ul. usatcheva 35a, 119048 moscow, tel. +7 095 755 6918, fax. +7 095 755 6919 singapore: lorong 1, toa payoh, singapore 319762, tel. +65 350 2538, fax. +65 251 6500 slovakia: see austria slovenia: see italy south africa: s.a. philips pty ltd., 195-215 main road martindale, 2092 johannesburg, p.o. box 58088 newville 2114, tel. +27 11 471 5401, fax. +27 11 471 5398 south america: al. vicente pinzon, 173, 6th floor, 04547-130 s?o paulo, sp, brazil, tel. +55 11 821 2333, fax. +55 11 821 2382 spain: balmes 22, 08007 barcelona, tel. +34 93 301 6312, fax. +34 93 301 4107 sweden: kottbygatan 7, akalla, s-16485 stockholm, tel. +46 8 5985 2000, fax. +46 8 5985 2745 switzerland: allmendstrasse 140, ch-8027 zrich, tel. +41 1 488 2741 fax. +41 1 488 3263 taiwan: philips semiconductors, 6f, no. 96, chien kuo n. rd., sec. 1, taipei, taiwan tel. +886 2 2134 2886, fax. +886 2 2134 2874 thailand: philips electronics (thailand) ltd., 209/2 sanpavuth-bangna road prakanong, bangkok 10260, tel. +66 2 745 4090, fax. +66 2 398 0793 turkey: yukari dudullu, org. san. blg., 2.cad. nr. 28 81260 umraniye, istanbul, tel. +90 216 522 1500, fax. +90 216 522 1813 ukraine : philips ukraine, 4 patrice lumumba str., building b, floor 7, 252042 kiev, tel. +380 44 264 2776, fax. +380 44 268 0461 united kingdom: philips semiconductors ltd., 276 bath road, hayes, middlesex ub3 5bx, tel. +44 208 730 5000, fax. +44 208 754 8421 united states: 811 east arques avenue, sunnyvale, ca 94088-3409, tel. +1 800 234 7381, fax. +1 800 943 0087 uruguay: see south america vietnam: see singapore yugoslavia: philips, trg n. pasica 5/v, 11000 beograd, tel. +381 11 3341 299, fax.+381 11 3342 553 printed in the netherlands 403510/200/02/pp 24 date of release: 2000 mar 29 document order number: 9397 750 06816

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